Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys

J. Coutinho*, A. Balsas, V. J. B. Torres, P. R. Briddom, M. Barroso

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Density-functional supercell calculations are employed to follow the location of the donor levels arising from interstitial carbon and interstitial carbon-oxygen complexes in SiGe alloys. We show that these complexes interact weakly with neighboring Ge atoms, and that energetics rules out the existence of defect-Ge complexes involving direct Ge-C or Ge-O bonds. The C iOi defect is predicted to produce a hole trap that varies as E(0/+) - Ev = 0.41 - 0.76x eV, implying its disappearance for Ge fractions x greater than 0.5.

Original languageEnglish
Pages (from-to)304-306
Number of pages3
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume114-115
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 15 Dec 2004
Externally publishedYes

Keywords

  • Carbon-oxygen complexes
  • Interstitial carbon
  • SiGe alloys

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