TY - JOUR
T1 - Titanium dioxide thin films deposited by electric field-assisted CVD
T2 - effect on antimicrobial and photocatalytic properties
AU - Romero, Luz
AU - Piccirillo, Clara
AU - Castro, Paula M. L.
AU - Bowman, Christopher
AU - Warwick, Michael E. A.
AU - Binions, Russell
PY - 2015/3/1
Y1 - 2015/3/1
N2 - Thin films of anatase titanium dioxide are deposited on fluorine-doped tin oxide (FTO) glass substrates utilizing the electric field-assisted aerosol (EA)CVD reaction of titanium isopropoxide in toluene at 450°C. The as-deposited films are characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy (RS), and UV-vis spectroscopy. The photoactivity and antibacterial activity of the films are also assessed. The characterization analysis reveals that the use of an electric field affects the film microstructure, its preferential orientation, and the functional properties. XRD of the anatase films reveals that the application of electric fields causes a change in the preferential orientation of the films from (101) to (004) or (211) planes, depending on the strength of the applied field during the deposition.
AB - Thin films of anatase titanium dioxide are deposited on fluorine-doped tin oxide (FTO) glass substrates utilizing the electric field-assisted aerosol (EA)CVD reaction of titanium isopropoxide in toluene at 450°C. The as-deposited films are characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy (RS), and UV-vis spectroscopy. The photoactivity and antibacterial activity of the films are also assessed. The characterization analysis reveals that the use of an electric field affects the film microstructure, its preferential orientation, and the functional properties. XRD of the anatase films reveals that the application of electric fields causes a change in the preferential orientation of the films from (101) to (004) or (211) planes, depending on the strength of the applied field during the deposition.
KW - Catalytic properties
KW - Semiconductors
KW - Surface properties
KW - Thin films
KW - Vapor deposition
UR - http://www.scopus.com/inward/record.url?scp=84924268281&partnerID=8YFLogxK
U2 - 10.1002/cvde.201407145
DO - 10.1002/cvde.201407145
M3 - Article
AN - SCOPUS:84924268281
SN - 0948-1907
VL - 21
SP - 63
EP - 70
JO - Chemical Vapor Deposition
JF - Chemical Vapor Deposition
IS - 1-3
ER -