Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys

J. Coutinho; A. Balsas; V. J. B. Torres; P. R. Briddom; M. Barroso

doi:10.1016/j.mseb.2004.07.048

Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys

J. Coutinho^*, A. Balsas, V. J. B. Torres, P. R. Briddom, M. Barroso

^*Autor correspondente para este trabalho

Resultado de pesquisa › revisão de pares

2 Citações (Scopus)

Resumo

Density-functional supercell calculations are employed to follow the location of the donor levels arising from interstitial carbon and interstitial carbon-oxygen complexes in SiGe alloys. We show that these complexes interact weakly with neighboring Ge atoms, and that energetics rules out the existence of defect-Ge complexes involving direct Ge-C or Ge-O bonds. The C _iO_i defect is predicted to produce a hole trap that varies as E(0/+) - E_v = 0.41 - 0.76x eV, implying its disappearance for Ge fractions x greater than 0.5.

Idioma original	English
Páginas (de-até)	304-306
Número de páginas	3
Revista	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	114-115
Número de emissão	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mseb.2004.07.048
Estado da publicação	Publicado - 15 dez. 2004
Publicado externamente	Sim

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Citação

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title = "Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys",

abstract = "Density-functional supercell calculations are employed to follow the location of the donor levels arising from interstitial carbon and interstitial carbon-oxygen complexes in SiGe alloys. We show that these complexes interact weakly with neighboring Ge atoms, and that energetics rules out the existence of defect-Ge complexes involving direct Ge-C or Ge-O bonds. The C iOi defect is predicted to produce a hole trap that varies as E(0/+) - Ev = 0.41 - 0.76x eV, implying its disappearance for Ge fractions x greater than 0.5.",

keywords = "Carbon-oxygen complexes, Interstitial carbon, SiGe alloys",

author = "J. Coutinho and A. Balsas and Torres, {V. J. B.} and Briddom, {P. R.} and M. Barroso",

year = "2004",

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day = "15",

doi = "10.1016/j.mseb.2004.07.048",

language = "English",

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journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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T1 - Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys

AU - Coutinho, J.

AU - Balsas, A.

AU - Torres, V. J. B.

AU - Briddom, P. R.

AU - Barroso, M.

PY - 2004/12/15

Y1 - 2004/12/15

N2 - Density-functional supercell calculations are employed to follow the location of the donor levels arising from interstitial carbon and interstitial carbon-oxygen complexes in SiGe alloys. We show that these complexes interact weakly with neighboring Ge atoms, and that energetics rules out the existence of defect-Ge complexes involving direct Ge-C or Ge-O bonds. The C iOi defect is predicted to produce a hole trap that varies as E(0/+) - Ev = 0.41 - 0.76x eV, implying its disappearance for Ge fractions x greater than 0.5.

AB - Density-functional supercell calculations are employed to follow the location of the donor levels arising from interstitial carbon and interstitial carbon-oxygen complexes in SiGe alloys. We show that these complexes interact weakly with neighboring Ge atoms, and that energetics rules out the existence of defect-Ge complexes involving direct Ge-C or Ge-O bonds. The C iOi defect is predicted to produce a hole trap that varies as E(0/+) - Ev = 0.41 - 0.76x eV, implying its disappearance for Ge fractions x greater than 0.5.

KW - Carbon-oxygen complexes

KW - Interstitial carbon

KW - SiGe alloys

UR - http://www.scopus.com/inward/record.url?scp=10844283796&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2004.07.048

DO - 10.1016/j.mseb.2004.07.048

M3 - Article

AN - SCOPUS:10844283796

SN - 0921-5107

VL - 114-115

SP - 304

EP - 306

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - SPEC. ISS.

ER -

Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys

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